Power N-MOSFET transistor 100V/0.17A; 225mW

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Index Ropla LRC0017
Herstellerkennzeichnung LBSS123LT1G
Hersteller LRC
Katalogkarte /lrc/lbss123lt1g.pdf lbss123lt1g.pdf (476,84KB)
Warengruppe MOS, FET Transistors
Hersteller LRC
Mounting Style SMD
Package/Case SOT-23
Transistor Type MOSFET
Polarity N-Channel
Drain-Source Voltage VDS 100V
Continuous Drain Current 170mA
Power Dissipation PD 225mW
Drain-Source Resistance RDS(on) 5.0Ω
Input Capacitance Ciss 20pF
Tₘᵢₙ -55°C
Tₘₐₓ 150°C
Packaging Tape on Reel
Sammelverpackung -/3.000/30.000 pcs
Gewicht 0.032000 g
Gewicht Sammelverpackung -/96 g/960 g
Zolltarifnummer 85412900
Power N-MOSFET transistor

• Low threshold voltage ideal for low voltage applications
• Small case SOT–23

Application in DC-DC converters, in power management systems for electrical devices such as computers, mobile phones, printers, portable devices, etc.

Lagervorrat

0 pcs on stock
by special order

Quantity

30.000 pcs Minimum order quantity
3.000 pcs Multiple
-/3.000/30.000 pcs Sammelverpackung

Nettopreis / pcs

pcs +  0,1006570 PLN