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Індекс Ropla HYE0653
Означення виробника HYG30P120H1K1
Виробник HY Electronic
Карта каталогу /hye/hyg30p120h1k1.pdf hyg30p120h1k1.pdf (1,37MB)

Товарна група IGBT modules
Виробник HY Electronic
Mounting Style THT
Collector-Emitter Voltage VCES 1200V
Collector Current IC 30A
Power Dissipation PD 200W
Collector Emitter Saturation Voltage VCE(sat) 2.1V @25A
Input Capacitance Ciss 2.6nF
Tₘᵢₙ -40°C
Tₘₐₓ 175°C
Packaging Inner Box
Зведена упаковка -/8/- pcs
Митний код 85411000
Bipolar Transistor with Isolated Gate (IGBT). Semiconductor power element used in power electronics converters with powers up to several hundred kilowatts.

• voltage controlled
• low loss of conduction and switching
• low saturation voltage (Vce sat)
• temperature sensor

Application
• motor drives
• UPS
• AC and DC drive amplifier
0 pcs on stock
by special order

8 pcs Minimum order quantity
8 pcs Multiple
-/8/- pcs Зведена упаковка

pcs + 235,8048000 PLN